• DocumentCode
    1978173
  • Title

    In depth analysis of dopant effect on high-k metal gate effective work function

  • Author

    Leroux, C. ; Baudot, S. ; Charbonnier, M. ; Van Deer Geest, A. ; Caubet, P. ; Toffoli, A. ; Blaise, Ph ; Ghibaudo, G. ; Martin, F. ; Reimbold, G.

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2012
  • fDate
    6-7 March 2012
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    The impact of additives (La, Al, Mg) at the SiO2/HfO2 interface has been investigated through ab-initio simulation and electrical measurements allowing a clear analysis of their respective impact on Vt shift.
  • Keywords
    additives; aluminium; hafnium compounds; high-k dielectric thin films; lanthanum; magnesium; semiconductor doping; silicon compounds; Al; La; Mg; SiO2-HfO2; ab-initio simulation; additives; dopant effect; electrical measurement; high-k metal gate effective work function; high-k; metal gate; work function;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
  • Conference_Location
    Grenoble
  • Print_ISBN
    978-1-4673-0191-6
  • Electronic_ISBN
    978-1-4673-0190-9
  • Type

    conf

  • DOI
    10.1109/ULIS.2012.6193345
  • Filename
    6193345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1978173