DocumentCode
1978329
Title
Numerical Investigation on Thermal Characteristics of BJTs Under the Impact of an EMP
Author
Xu, Rong-Rong ; Yin, Wen-Yan ; Mao, Jun-Fa
Author_Institution
Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai
fYear
2007
fDate
11-14 Dec. 2007
Firstpage
1
Lastpage
4
Abstract
Transient thermal analysis of a bipolar junction transistor (BJT) is carried out in this paper, with the hybrid finite element method (FEM) employed. The distribution and variation of the electronic field, current density, and temperature in the transistor under the impact of an electromagnetic pulse (EMP) are characterized numerically.
Keywords
bipolar transistors; electromagnetic pulse; finite element analysis; BJT; EMP; bipolar junction transistor; current density; electromagnetic pulse; electronic field; hybrid finite element method employed; thermal characteristics; transient thermal analysis; Current density; EMP radiation effects; Finite element methods; Microwave theory and techniques; Semiconductor device reliability; Semiconductor devices; Silicon; Temperature distribution; Thermal conductivity; Thermal engineering; Hybrid FEM; bipolar junction transistor (BJT); electromagnetic pulse; temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location
Bangkok
Print_ISBN
978-1-4244-0748-4
Electronic_ISBN
978-1-4244-0749-1
Type
conf
DOI
10.1109/APMC.2007.4554916
Filename
4554916
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