Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices

Author

Almeida, L.M. ; Aoulaiche, M. ; Sasaki, K.R.A. ; Nicoletti, T. ; de Andrade, M.G.C. ; Collaert, N. ; Simoen, E. ; Claeys, C. ; Martino, J.A. ; Jurczak, M.

Author_Institution

LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil

fYear

2012

fDate

6-7 March 2012

Firstpage

61

Lastpage

64

Abstract

This paper investigates the drain read bias impact on the FB-BRAM performance of Ultra Thin Buried Oxide (UTBOX) Fully Depleted Silicon On Insulator (FDSOI) devices. Both simulations and experimental results are used. Two read regimes are clearly observed. In the read regime at higher drain voltage, impact ionization is occurring and this result in a higher sense margin and a lower retention time compared to the low drain voltage read regime.

Keywords

impact ionisation; silicon-on-insulator; FB-BRAM performance; UTBOX FDSOI device; drain read bias impact; drain voltage read regime; fully depleted silicon on insulator device; impact ionization; ultra thin buried oxide; Current measurement; Impact ionization; Junctions; Latches; Logic gates; Random access memory; Semiconductor process modeling; FBRAM; Retention Time; Sense Margin Current; UTBOX;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193357

Filename

6193357