• DocumentCode
    1978513
  • Title

    A practical 256K GMR NV memory for high shock applications

  • Author

    Sinclair, R.A. ; Mundon, S.A. ; Aryal, S.C. ; Sinclair, C.M.

  • Author_Institution
    Nonvolatile Electron. Inc., Eden Prairie, MN, USA
  • fYear
    1998
  • fDate
    22-24 Jun 1998
  • Firstpage
    38
  • Lastpage
    42
  • Abstract
    Nonvolatile memory components used in shock recorders have unique requirements compared to other applications. These include fast write speeds, unlimited operation without wear-out, no data loss with high shock and power loss, and small chip size. A nonvolatile memory component that has the characteristics needed for high shock recorders and other microcontroller applications can be constructed in a cost effective and shock resistant die which is 0.25" on a side using standard CMOS processing. The 256K component described here uses giant magnetoresistive material (GMR), which provides a larger signal than anisotropic magnetoresistive material (AMR) based devices and can be used in bits scaled to sub-μm sizes. Small conventional mode bits can be used effectively in intermediate size magnetoresistive RAM (MRAM) components that fit a large microcontroller application market. Built-in dual redundant bits and spare sense lines allow a high product yield, thus providing additional potential production cost reductions. Future size reductions will occur when the pseudo spin valve bit has been sufficiently developed to be dropped into this design
  • Keywords
    CMOS memory circuits; giant magnetoresistance; integrated circuit design; integrated circuit reliability; integrated circuit yield; magnetic multilayers; magnetoresistive devices; random-access storage; shock measurement; 0.25 in; 256 kbit; GMR NV memory; MRAM; chip size; conventional mode bits; cost effectiveness; data loss; dual redundant bits; giant magnetoresistive material; high shock applications; intermediate size magnetoresistive RAM components; microcontroller applications; nonvolatile memory component; nonvolatile memory components; power loss; product yield; production cost reduction; pseudo spin valve bit; shock recorders; shock resistant die; size reduction; spare sense lines; standard CMOS processing; unlimited operation; write speed; Anisotropic magnetoresistance; CMOS process; Costs; Electric shock; Giant magnetoresistance; Magnetic materials; Microcontrollers; Nonvolatile memory; Production; Read-write memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    0-7803-4518-5
  • Type

    conf

  • DOI
    10.1109/NVMT.1998.723215
  • Filename
    723215