Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling

Author

Lachaume, R. ; Coignus, J. ; Garros, X. ; Scheiblin, P. ; Muñoz, D. ; Reimbold, G.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2012

fDate

6-7 March 2012

Firstpage

97

Lastpage

100

Abstract

This paper proposes to address how a-Si:H(p) bulk defects impact the macroscopic electrical characteristics of state-of-the-art HeteroJunction (HJ) solar cells. Thanks to 2D TCAD modeling we can give variation ranges for doping dependent defects concentrations for which solar cell performances are maximum. Besides, for low doping levels (ie. low experimental defects values), it is the adjacent ITO contact which governs the front side HJ electrostatics and thus the solar cell performance.

Keywords

amorphous semiconductors; doping profiles; hydrogen; indium compounds; semiconductor doping; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; tin compounds; 2D TCAD modeling; HJ electrostatics; ITO; Si:H-ITO; bulk defect Impact; doping dependent defect concentration; heterojunction solar cell; hydrogenated amorphous Si layer; macroscopic electrical characteristic; Doping; Electrostatics; Heterojunctions; Indium tin oxide; Photovoltaic cells; Semiconductor process modeling; Silicon; bulk defects; heterojunction solar cells; hydrogenated amorphous Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193366

Filename

6193366