DocumentCode :
1978965
Title :
A 2-Watt X-Band FET and Impatt Diode Integrated Amplifier
Author :
Ho, Thomas Chen-Chou ; Fu, Shiang
Author_Institution :
Chung Shan Institute of Science and Technology, Taiwan 325, Republic of China.
fYear :
1980
fDate :
8-12 Sept. 1980
Firstpage :
517
Lastpage :
520
Abstract :
A practical design and performance of 2 watts, 800 MHz 1-dB bandwidth, GaAs FET and Silicon IMPATT diode integrated amplifier via MIC technique are presented.
Keywords :
Bandwidth; Broadband amplifiers; Diodes; Driver circuits; FETs; Frequency; Gain; Gallium arsenide; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
Type :
conf
DOI :
10.1109/EUMA.1980.332851
Filename :
4131537
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1978965
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