Ultra-high speed composition graded InGaAsSb/GaAsSb DHBTs with f/sub T/ = 500 GHz grown by gas-source molecular beam epitaxy

Author

Wu, Bing-Ruey ; Snodgrass, William ; Hafez, Walid ; Feng, Milton ; Cheng, K.Y.

Author_Institution

Illinois Univ., Urbana, IL

fYear

0

fDate

0-0 0

Firstpage

89

Lastpage

91

Abstract

Graded InGaAsSb:C base double heterojunction bipolar transistors (DHBT) were grown on InP to enhance the electron transit time through the base region. A record high unity current gain frequency f_T of 500 GHz is achieved in the DHBT with a 250 Aring thick InGaAsSb:C linear graded base

Keywords

III-V semiconductors; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; 250 angstrom; 500 GHz; InGaAsSb-GaAsSb; InGaAsSb:C; InP; composition graded InGaAsSb/GaAsSb; double heterostructure bipolar transistor; electron transit time; gas-source molecular beam epitaxy; linear graded base; ultrahigh speed DHBT; Double heterojunction bipolar transistors; Electron beams; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Temperature measurement; Thermal conductivity; Valves;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634118

Filename

1634118