Selectively Implanted Subcollector DHBTs

Author

Parthasarathy, N. ; Griffith, Z. ; Kadow, C. ; Singisetti, U. ; Rodwell, M.J.W. ; Urteaga, M. ; Shinohara, K. ; Brar, B.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

fYear

0

fDate

0-0 0

Firstpage

104

Lastpage

107

Abstract

In_0.53Ga_0.47As/InP double heterojunction bipolar transistors with implanted subcollectors have been designed and fabricated to eliminate the base access pad capacitance. A blanket Fe implant eliminates the interface charge and a patterned Si implant creates an isolated N⁺⁺ subcollector. The extrinsic base-collector capacitance C_cb associated with the base interconnect pad (-25% of the total C_cb) is thus eliminated. These implanted subcollector DHBTs have 363 GHz f_t and 410 GHz f_max. The DC current gain beta ~ 40, BV_ceo = 5.6 V, BV_cbo = 6.9 V (Ic = 1 mA)

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; ion implantation; iron; semiconductor doping; silicon; 1 mA; 363 GHz; 410 GHz; 5.6 V; 6.9 V; DC current gain; Fe; In_0.53Ga_0.47As-InP; In_0.53Ga_0.47As/InP double heterojunction bipolar transistors; Si; base access pad capacitance; base interconnect pad; base-collector capacitance; blanket Fe implant; interface charge; patterned Si implant; subcollector DHBT; Bandwidth; Delay; Double heterojunction bipolar transistors; Feeds; Heterojunction bipolar transistors; Implants; Indium phosphide; Iron; Parasitic capacitance; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634122

Filename

1634122