DocumentCode
1979272
Title
Effect of TiO2 dense film prepared by long-throw RF sputtering on the performance of dye-sensitized solar cell
Author
Abdullah, Mohd Harun ; Rusop, M.
Author_Institution
NANO-Electron. Centre (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
fYear
2013
fDate
19-20 Aug. 2013
Firstpage
178
Lastpage
182
Abstract
Graded index TiO2 dense film that can improve transmittance is employed at the interface between the indium-tin-oxide (ITO) and nanocrystalline-TiO2 by radio-frequency magnetron sputtering. The employment of the d-TiO2 film in the dye sensitized solar cell was investigated by means of optical properties (UV-absorption and transmittance spectra) and open-circuit voltage decay (OCVD). The blue-shift of the UV-absorption spectra and lower series resistance value of the dry cell implied the decrease of the charge interfacial resistance, and thus facilitating the charge transport from the nanocrystalline-TiO2 to the ITO. Furthermore, the higher conversion efficiency of about 4.38%, representing almost 53% increment compared to bare ITO cell is mainly due to the effectiveness of blocking effect and better spectral management across the interfaces in the DSSC. These integrated features became desirable traits brought about by the application of the ITO/d-TiO2 for use in dense film-based DSSC applications. This work also provides the fundamental insight of the dense film that determines the origin of such improvement in the DSSC performance.
Keywords
indium compounds; solar cells; sputtering; titanium compounds; ITO; ITO cell; TiO2; UV absorption; dye-sensitized solar cell; indium-tin-oxide interface; long throw RF sputtering; radiofrequency magnetron sputtering; titanium dioxide dense film; transmittance spectra; Decision support systems; Films; Glass; Indium tin oxide; Photovoltaic cells; Sputtering; Substrates; Blue-shift; Charge transfer; Open-circuit voltage decay; Recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
System Engineering and Technology (ICSET), 2013 IEEE 3rd International Conference on
Conference_Location
Shah Alam
Print_ISBN
978-1-4799-1028-1
Type
conf
DOI
10.1109/ICSEngT.2013.6650166
Filename
6650166
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