DocumentCode
1979464
Title
Recent research results on deep level defects in semi-insulating InP-application to improve material quality
Author
Zhao, Youwen ; Dong, Zhiyuan ; Dong, Hongwei ; Sun, Niefeng ; Sun, Tongnian
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing
fYear
0
fDate
0-0 0
Firstpage
139
Lastpage
143
Abstract
An apparent defect suppression effect has been observed in InP through an investigation of deep level defects in different semi-insulating (SI) InP materials. Quality improvement of SI-InP based on the defect suppression mechanism is presented
Keywords
III-V semiconductors; deep levels; indium compounds; vacancies (crystal); apparent defect suppression effect; deep level defects; material quality; quality improvement; semiinsulating InP materials; semiinsulating InP-application; Annealing; Conductivity; Hall effect; Indium phosphide; Semiconductor materials; Substrates; Sun; Temperature; Thermal resistance; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location
Princeton, NJ
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634131
Filename
1634131
Link To Document