• DocumentCode
    1979511
  • Title

    The Design of Schottky Diodes for Microwave Regime

  • Author

    Gradinaru, Gh. ; Dorobantu, A.N.

  • Author_Institution
    Research Institute for Electronic Components (ICCE), Str. Erou Iancu Nicolae 32B, 72996 Bucharest, ROMANIA.
  • fYear
    1980
  • fDate
    8-12 Sept. 1980
  • Firstpage
    657
  • Lastpage
    661
  • Abstract
    A general method is presented to design microwave Schottky diodes for detection and mixing, based on correlations between imposed microwave electrical parameters and structural elements in various polarization and frequency regimes. Computer-drawn families of curves yield directly these correlations, promising a rapid choice of design parameters for any type of Si and GaAs Schottky diode.
  • Keywords
    Current-voltage characteristics; Frequency; Gallium arsenide; Microwave theory and techniques; Noise level; Schottky barriers; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Signal to noise ratio;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1980. 10th European
  • Conference_Location
    Warszawa, Poland
  • Type

    conf

  • DOI
    10.1109/EUMA.1980.332777
  • Filename
    4131562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979511