• DocumentCode
    1979692
  • Title

    Anomalous short channel effects in Indium implanted nMOSFETs

  • Author

    Bouillon, P. ; Gwoziecki, R. ; Skotnicki, T.

  • Author_Institution
    CNET, Meylan, France
  • fYear
    1997
  • fDate
    10-10 Dec. 1997
  • Firstpage
    231
  • Lastpage
    234
  • Abstract
    A long distance roll-off, occurring on Indium-doped NMOS architectures, is experimentally observed and analyzed. It is suggested that Indium is prone to a local interstitial-assisted deactivation in the junction vicinity. This interpretation is consistent with the results of material-, device- and modeling-oriented experiments. In order to recover good electrical performances, it is shown that Indium deactivation has to be reduced thanks to an interstitial-free process.
  • Keywords
    MOSFET; indium; interstitials; ion implantation; Si:In; indium implanted nMOSFET; interstitial-assisted deactivation; roll-off; short channel effect; Annealing; Boron; CMOS technology; Data mining; Indium; MOS devices; MOSFETs; Robustness; Silicon; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4100-7
  • Type

    conf

  • DOI
    10.1109/IEDM.1997.650356
  • Filename
    650356
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1979692