DocumentCode
1979755
Title
Issues in transport
Author
Hess, Karl
Author_Institution
Beckman Inst., Illinois Univ., Urbana, IL, USA
fYear
2003
fDate
23-25 June 2003
Firstpage
9
Abstract
In this paper, the four examples that complexity of the connection of quantum effects in nanostructure to the properties of devices and integrated circuits.
Keywords
MOSFET; ballistic transport; biomedical equipment; nanostructured materials; semiconductor device reliability; surface emitting lasers; MOS transistors; ballistic transport; devices properties; integrated circuits; nanostructure; quantum effect connection; semiconductor device reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226848
Filename
1226848
Link To Document