Highly-ordered and highly-stacked (150-layers) quantum dots

Author

Akahane, Kouichi ; Yamamoto, Naokatsu ; Gozu, S. ; Ueta, Akio ; Ohtani, Noboru ; Tsuchiya, Masahiro

Author_Institution

National Inst. of Information & Commun. Technol., Tokyo

fYear

0

fDate

0-0 0

Firstpage

192

Lastpage

196

Abstract

We review our successful growth of stacks of InAs quantum dots (QDs) on InP(311)B substrates using a novel strain-control technique and improved the size uniformity of the QDs by precisely controlling the composition of the strain-compensating spacer layers. In a stack of 150 InAs QD layers, the density of the QDs exceeds 5times10¹²/cm² which cannot be obtained using conventional techniques for fabricating QDs. In a sample of a 150-layer stack, the QDs show good size uniformity and an ordered structure. In addition, a strong 1.5 mum photoluminescence emission was observed from this sample at room temperature

Keywords

III-V semiconductors; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; 293 to 298 K; InAs quantum dots; InAs-InPB; InP(311)B substrates; InPB; highly-ordered quantum dots; highly-stacked quantum dots; ordered structure; photoluminescence emission; size uniformity; strain-compensating spacer layers; strain-control technique; Capacitive sensors; Electron beams; Gallium arsenide; Optical devices; Photoluminescence; Quantum dots; Self-assembly; Stacking; Substrates; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634146

Filename

1634146