DocumentCode
1979862
Title
Comparison of buffer material for InAs quantum dots on GaAs substrate
Author
Shimizu, Hitoshi ; Saravanan, Shanmugam
Author_Institution
ATR Wave Eng. Lab., Kyoto
fYear
0
fDate
0-0 0
Firstpage
197
Lastpage
200
Abstract
This paper describes the buffer-material dependence of 1.3 mum-range quantum dots (QD), a subject that is useful for increasing the dot density while maintaining the photoluminescence (PL) intensity. Four types of buffer-material, that is, GaAs, GaAsSb, InGaAs, and Si, were investigated. The PL intensity with the same QD density increases about 3 times when GaAsSb-buffer is used
Keywords
III-V semiconductors; buffer layers; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; silicon; GaAs; GaAs substrate; InAs quantum dots; InAs-GaAs; InAs-GaAsSb; InAs-InGaAs; InAs-Si; buffer material; dot density; photoluminescence; Atom lasers; Gallium arsenide; Laser theory; Laser transitions; Performance evaluation; Quantum dot lasers; Quantum dots; Relativistic quantum mechanics; Solid lasers; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location
Princeton, NJ
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634147
Filename
1634147
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