Title :
Comparison of buffer material for InAs quantum dots on GaAs substrate
Author :
Shimizu, Hitoshi ; Saravanan, Shanmugam
Author_Institution :
ATR Wave Eng. Lab., Kyoto
Abstract :
This paper describes the buffer-material dependence of 1.3 mum-range quantum dots (QD), a subject that is useful for increasing the dot density while maintaining the photoluminescence (PL) intensity. Four types of buffer-material, that is, GaAs, GaAsSb, InGaAs, and Si, were investigated. The PL intensity with the same QD density increases about 3 times when GaAsSb-buffer is used
Keywords :
III-V semiconductors; buffer layers; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; silicon; GaAs; GaAs substrate; InAs quantum dots; InAs-GaAs; InAs-GaAsSb; InAs-InGaAs; InAs-Si; buffer material; dot density; photoluminescence; Atom lasers; Gallium arsenide; Laser theory; Laser transitions; Performance evaluation; Quantum dot lasers; Quantum dots; Relativistic quantum mechanics; Solid lasers; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634147
