DocumentCode
1980210
Title
Fringe field and quantum mechanical effects on capacitance characteristics of sub-0.1 micron MOS devices
Author
Gunther, N.G. ; Mutlu, A.A. ; Rahman, M.
Author_Institution
Electron Devices Lab., Santa Clara Univ., CA, USA
fYear
2003
fDate
23-25 June 2003
Firstpage
53
Lastpage
54
Abstract
In this paper, we compare the 3D VQM expressions obtained for the capacitive energy of the oxide region and the depletion region with those for a device with infinitely large gate. The 3D quantum mechanical effect of the fringe field on the energy is then extracted as a correction factor to the capacitance for each region.
Keywords
MOS capacitors; semiconductor device models; 0.1 micron; capacitance; correction factor; fringe field; quantum mechanical effects; submicron MOS devices; variational quantum mechanical model; Capacitance-voltage characteristics; Closed-form solution; Doping; Electrostatics; Fluctuations; MOS capacitors; MOS devices; Quantum capacitance; Quantum mechanics; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226868
Filename
1226868
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