Title :
Increase of parasitic resistance of p-MOSFETs due to nitrogen atoms incorporation into silicon substrate by N/sub 2/O-oxynitride gate dielectrics process
Author :
Takayanagi-Takagi, M. ; Yoshimura, H. ; Toyoshima, Y.
Author_Institution :
Electron Device Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
In this paper, we study the characteristics of MOSFETs with N/sub 2/O-oxynitride gate dielectrics, shallow junctions and TiSi/sub 2/ source/drain diffusions in order to investigate the overall impact of N/sub 2/O-oxynitride gate dielectrics on high performance CMOSFETs. It is demonstrated that, in addition to the mobility degradation, an increase of parasitic resistance in gate-overlapped source/drain region by the nitrogen donors contributes to the reduction of current drivability, especially in p-MOSFETs.
Keywords :
MOSFET; carrier mobility; dielectric thin films; diffusion; nitrogen compounds; semiconductor device reliability; CMOSFETs; N/sub 2/O-Si; Si; current drivability; gate-overlapped source/drain region; mobility degradation; oxynitride gate dielectrics; p-MOSFETs; parasitic resistance; shallow junctions; source/drain diffusions; Boron; CMOS technology; CMOSFETs; Degradation; Dielectric substrates; MOSFET circuits; Nitrogen; Silicides; Silicon; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650359
