Multiple delta doping for improved driftzone design for lateral silicon power MOSFETs

Author

Tolksdorf, C. ; Ludsteck, A. ; Schmidt, M. ; Sedlmaier, S. ; Schulze, J. ; Eisele, I. ; Deboy, G.

Author_Institution

Inst. of Phys., Univ. of German Fed. Armed Forces Munich, Neubiberg, Germany

fYear

2003

fDate

23-25 June 2003

Firstpage

59

Lastpage

60

Abstract

In this paper, we expect higher doping concentrations to reduce the resistance of the drift zone in forward bias, on the other hand leakage current in reverse bias must be kept at a minimum and the breakdown voltage unchanged. An unintentional n-doping of 1.10/sup 16/ cm/sup -3/, that is characteristic for MBE (Molecular Beam Epitaxy) grown samples, is currently still degrading the reverse bias characteristics and will be improved in further test structures.

Keywords

electric resistance; elemental semiconductors; leakage currents; power MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor doping; silicon; MBE; Si; breakdown voltage; doping concentrations; electric resistance; leakage current; molecular beam epitaxy; multiple delta doping; reverse bias characteristics; silicon power MOSFET; Doping; Electric resistance; Leakage current; MOSFETs; Molecular beam epitaxial growth; Physics; Silicon; Testing; Thermal stresses; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2003

Conference_Location

Salt Lake City, UT, USA

Print_ISBN

0-7803-7727-3

Type

conf

DOI

10.1109/DRC.2003.1226871

Filename

1226871