A Novel Method for HBT Intrinsic Collector Resistance Extraction from S-Parameters

Author

Johansen, Tom ; Krozer, Viktor ; Hadziabdic, Dzenan ; Jiang, Chenhui ; Konczykowska, Agnieszka ; Dupuy, Jean-Yves

Author_Institution

Electro-Sci. Sect. Syst., Tech. Univ. of Denmark, Lyngby

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

In this paper the extraction of series resistances for high-speed InP DHBT devices is investigated. Known extraction methods based on measured S-parameters are reviewed and error terms are identified. A novel method for intrinsic collector resistance extraction is proposed. The method is based on S- parameters measured in saturation and forward active regions. The results are applied to the large-signal modeling of InP DHBT devices using the UCSD HBT model and very accurate model response is obtained.

Keywords

S-parameters; heterojunction bipolar transistors; indium compounds; DHBT devices; HBT intrinsic collector resistance extraction; S-parameters; UCSD HBT model; series resistances; Capacitance; Contact resistance; DH-HEMTs; Data mining; Electrical resistance measurement; Equivalent circuits; Heterojunction bipolar transistors; Indium phosphide; Microwave theory and techniques; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4555014

Filename

4555014