High-power K-band submicron insulating gate heterostructure field-effect transistors

Author

Tarakji, A. ; Simin, G. ; Fatima, H. ; Adivarahan, V. ; Gaevski, M. ; Sun, W. ; Yang, J. ; Khan, M.A. ; Shur, M.S. ; Gaska, R.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

fYear

2003

fDate

23-25 June 2003

Firstpage

67

Lastpage

68

Abstract

In this paper, we report the high performance quarter micron gate Si/sub 3/N/sub 4//AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MISHFET) with a 5 W/mm CW power at 26 GHz at drain bias of 35 V. The MISHFETs to have the same power gain and power added efficiency as the HFETs, in spite of lower transconductance. An improved RF linearity of MISHFETs is attributed to more linear transconductance-gate bias dependence.

Keywords

III-V semiconductors; MISFET; aluminium compounds; gallium compounds; power field effect transistors; silicon compounds; wide band gap semiconductors; 26 GHz; 35 V; MISHFET; RF linearity; Si/sub 3/N/sub 4/-AlGaN-GaN; Si/sub 3/N/sub 4//AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors; high power K-band submicron insulating gate heterostructure field-effect transistors; lower transconductance; power added efficiency; power gain; Aluminum gallium nitride; Gallium nitride; HEMTs; Insulation; K-band; MODFETs; Metal-insulator structures; Performance gain; Radio frequency; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2003

Conference_Location

Salt Lake City, UT, USA

Print_ISBN

0-7803-7727-3

Type

conf

DOI

10.1109/DRC.2003.1226875

Filename

1226875