Control of operating wavelength and linewidth in LWIR InAs/InGaAs dots-in-a-well detectors

Author

Raghavan, S. ; von Winckel, G. ; Rotella, P. ; Stintz, A. ; Krishna, S.

Author_Institution

Electron. Eng. & Coput. Sci. Dept., New Mexico Univ., Albuquerque, NM, USA

fYear

2003

fDate

23-25 June 2003

Firstpage

71

Lastpage

72

Abstract

In this paper, The detectors consist of a ten stack InAs/In/sub 0.15/Ga/sub 0.85/As DWELL active region and were grown in a solid-source MBE reactor. From an analysis of the photoluminescence spectra, we attribute this peak to a transition from a state in the dot to a state in the well. In order to increase the operating wavelength of the detector, the effect of two parameters, namely the well width and the substrate temperature during the growth of the dots (T/sub g/), were investigated.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; photoluminescence; quantum well devices; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; InAs-InGaAs; LWIR InAs/InGaAs dots-well detectors; linewidth; molecular beam epitaxial growth; photoluminescence spectra; substrate temperature; Cameras; Chemical technology; Detectors; Gallium arsenide; Indium gallium arsenide; Night vision; Photoluminescence; Quantum dots; Shape control; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2003

Conference_Location

Salt Lake City, UT, USA

Print_ISBN

0-7803-7727-3

Type

conf

DOI

10.1109/DRC.2003.1226877

Filename

1226877