DocumentCode
1980440
Title
Photoluminescence Mapping of AIGaAs/GaAs HBT Layer Sequences
Author
Tews, H. ; Neumann, R. ; Zwicknagl, P.
Author_Institution
SIEMENS Research Laboratories, Federal Republic of Germany
fYear
1992
fDate
8-11 Jun 1992
Firstpage
212
Lastpage
213
Keywords
Annealing; Doping; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Luminescence; Photoluminescence; Qualifications; Spectroscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.665022
Filename
665022
Link To Document