Title :
On the temperature behavior of Si/SiGe/Si-HBT: comparison between measurements and numerical simulation
Author :
Nuernbergk, Dirk M. ; Forster, Hendrik ; Schwierz, Frank ; Yuan, Jiann S. ; Paasch, Gernot
Author_Institution :
Tech. Univ. Ilmenau, Germany
Abstract :
This paper deals with the temperature behavior of Si/SiGe/Si-HBT. Experimental data are compared with results of numerical simulations. DC and RF results are explained by analytical formulas. It was found that the temperature behavior of Si/SiGe/Si HBT are similar to that of all silicon devices
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; silicon; 280 to 400 K; DC behavior; Kirk effect; RF behavior; Si-SiGe-Si; Si/SiGe/Si HBT; analytical formulas; breakdown voltage; collector currents; measurements; numerical simulation; physical models; temperature behavior; transit frequency; Charge carrier processes; Electric potential; Electron mobility; Germanium silicon alloys; Heterojunction bipolar transistors; Numerical simulation; Poisson equations; Silicon germanium; Temperature dependence; Temperature measurement;
Conference_Titel :
Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on
Conference_Location :
Isla de Margarita
Print_ISBN :
0-7803-4434-0
DOI :
10.1109/ICCDCS.1998.705801
