On the temperature behavior of Si/SiGe/Si-HBT: comparison between measurements and numerical simulation

Author

Nuernbergk, Dirk M. ; Forster, Hendrik ; Schwierz, Frank ; Yuan, Jiann S. ; Paasch, Gernot

Author_Institution

Tech. Univ. Ilmenau, Germany

fYear

1998

fDate

2-4 Mar 1998

Firstpage

37

Lastpage

41

Abstract

This paper deals with the temperature behavior of Si/SiGe/Si-HBT. Experimental data are compared with results of numerical simulations. DC and RF results are explained by analytical formulas. It was found that the temperature behavior of Si/SiGe/Si HBT are similar to that of all silicon devices

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; silicon; 280 to 400 K; DC behavior; Kirk effect; RF behavior; Si-SiGe-Si; Si/SiGe/Si HBT; analytical formulas; breakdown voltage; collector currents; measurements; numerical simulation; physical models; temperature behavior; transit frequency; Charge carrier processes; Electric potential; Electron mobility; Germanium silicon alloys; Heterojunction bipolar transistors; Numerical simulation; Poisson equations; Silicon germanium; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on

Conference_Location

Isla de Margarita

Print_ISBN

0-7803-4434-0

Type

conf

DOI

10.1109/ICCDCS.1998.705801

Filename

705801