• DocumentCode
    1980522
  • Title

    MBE growth and characteristics of self-assembled InAs/InGaAs/GaAs quantum dots

  • Author

    Park, C.Y. ; Kim, J.M. ; Lee, Y.T.

  • Author_Institution
    Dept. of Information & Commun., Gwangju Inst. of Sci. & Technol.
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    303
  • Lastpage
    304
  • Abstract
    Self-assembled InAs QDs was grown on (001) GaAs substrate by MBE. The dot density was 5.2times1010/cm2, the height was 14 nm and the width was 30 nm. The peak-wave length and the FWHM were 1266 nm and 41.23 meV respectively
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; self-assembly; semiconductor growth; semiconductor quantum dots; spectral line breadth; (001) GaAs substrate; 1266 nm; 14 nm; 30 nm; FWHM; InAs-InGaAs-GaAs; MBE; MBE growth; dot density; peak-wave length; photoluminescence; self-assembled InAs/InGaAs/GaAs quantum dots; Atomic force microscopy; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Scanning electron microscopy; Substrates; Temperature; Transmission electron microscopy; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634175
  • Filename
    1634175
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1980522