Title :
Minimum emitter charging time for heterojunction bipolar transistors
Author :
Machida, N. ; Miyamoto, Y. ; Furuya, K.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
Abstract :
The minimum emitter charging time for heterojunction bipolar transistors with a single n+ doped emitter layer was derived on the basis of transmission formalism. The obtained minimum charging time is almost equal to that from charge-control analysis using TCAD software. Since the calculation time based on our theory is very short, the process of emitter design is significantly simplified
Keywords :
heterojunction bipolar transistors; technology CAD (electronics); TCAD software; charge-control analysis; emitter design; heterojunction bipolar transistors; minimum charging time; minimum emitter charging time; single n+ doped emitter layer; transmission formalism; Capacitance; Current density; Effective mass; Electron emission; Heterojunction bipolar transistors; Numerical simulation; Poisson equations; Process design; Temperature; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634181
