DocumentCode
1980646
Title
Minimum emitter charging time for heterojunction bipolar transistors
Author
Machida, N. ; Miyamoto, Y. ; Furuya, K.
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol.
fYear
0
fDate
0-0 0
Firstpage
325
Lastpage
328
Abstract
The minimum emitter charging time for heterojunction bipolar transistors with a single n+ doped emitter layer was derived on the basis of transmission formalism. The obtained minimum charging time is almost equal to that from charge-control analysis using TCAD software. Since the calculation time based on our theory is very short, the process of emitter design is significantly simplified
Keywords
heterojunction bipolar transistors; technology CAD (electronics); TCAD software; charge-control analysis; emitter design; heterojunction bipolar transistors; minimum charging time; minimum emitter charging time; single n+ doped emitter layer; transmission formalism; Capacitance; Current density; Effective mass; Electron emission; Heterojunction bipolar transistors; Numerical simulation; Poisson equations; Process design; Temperature; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location
Princeton, NJ
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634181
Filename
1634181
Link To Document