Title :
Effect of Schottky layer thickness on DC, RE and noise of 70-nm gate length InP HEMTs
Author :
Malmkvist, Mikael ; Borg, Malin ; Wang, Shumin ; Grahn, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
Abstract :
The Schottky layer thickness of 70-nm InP HEMTs has been studied with respect to DC, RF and noise performance. An optimum gate-to-channel distance between 13-14 nm was found. Biased at a drain-to-source voltage of 0.7 V, a 2times50 mum device exhibited an extrinsic transconductance, gm, of 1.1 mS/mm. The maximum frequency of oscillation, fmax, and the transit frequency, fT, were extracted to 200 GHz and 170 GHz, respectively. A 50 Omega noise temperature of 140 K was measured at room temperature
Keywords :
Schottky barriers; electrical conductivity; high electron mobility transistors; indium compounds; semiconductor device noise; 0.7 V; 1.1 mS/mm; 13 to 14 nm; 140 K; 170 GHz; 200 GHz; 50 ohm; 70 nm; DC performance; InP; InP HEMT; RF performance; Schottky layer thickness; drain-source voltage; extrinsic transconductance; gate length; gate-channel distance; maximum frequency of oscillation; noise performance; noise temperature; transit frequency; Acoustical engineering; Etching; HEMTs; Indium phosphide; MODFETs; Noise measurement; Radio frequency; Schottky barriers; Transconductance; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634182
