DocumentCode
1980992
Title
Body-tied double-gate SONOS flash (omega flash) memory device built on bulk Si wafer
Author
Il Hwan Cho ; Tai-Su Park ; Si Young Choi ; Jong Duk Lee ; Jong-Ho Lee
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
fYear
2003
fDate
23-25 June 2003
Firstpage
133
Lastpage
134
Abstract
In this paper, for the first time, a body-tied double-gate SONOS flash memory device using bulk Si wafer is proposed. Brief fabrication steps and measured characteristics are presented.
Keywords
MIS devices; flash memories; hot carriers; photolithography; MIS devices; SONOS flash memory; Si; Si wafer; channel hot electron injection; omega flash memory; photolithography; silicon-oxide-nitride-oxide-silicon flash memory device; Computer science; Etching; Fabrication; FinFETs; Flash memory; Ion implantation; Materials science and technology; Research and development; SONOS devices; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226904
Filename
1226904
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