Title :
Silicon single-electron turnstile
Author :
Ono, Y. ; Yamazaki, K. ; Takahashi, Y.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
Abstract :
In this paper, we report the first demonstration of the single-electron turnstile, one of the single-charge transfer device, based on Si materials.
Keywords :
charge-coupled devices; electric current measurement; elemental semiconductors; silicon; single electron transistors; Si; current measurement; silicon single electron turnstile; single charge-transfer device; Application specific integrated circuits; Current measurement; Laboratories; MOSFET circuits; Oxidation; Silicon; Single electron devices; Single electron transistors; Temperature; Threshold voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226906
