DocumentCode :
1981165
Title :
Metalorganic Chemical Vapor Deposition Growth of High-Quality InAs/GaSb Type II Superlattices for Mid-IR Photodetector Applications
Author :
Zhang, X.B. ; Petschke, A. ; Mou, S. ; Xu, C. ; Ryou, J.H. ; Chuang, S.L. ; Hsieh, K.C. ; Dupuis, R.D.
fYear :
2006
fDate :
7-11 May 2006
Firstpage :
415
Lastpage :
419
Keywords :
Chemical vapor deposition; Gallium arsenide; Infrared detectors; Laser sintering; MOCVD; Metallic superlattices; Molecular beam epitaxial growth; Photodetectors; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN :
0-7803-9558-1
Type :
conf
DOI :
10.1109/ICIPRM.2006.1634204
Filename :
1634204
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1981165
