Title :
Fabrication and Electrical Characterisation of n-InAs Single Nanowhisker Field-Effect Transistors
Author :
Do, Q.T. ; Regolin, I. ; Khorenko, V. ; Prost, W. ; Tegude, F.-J.
Author_Institution :
Solid State Electron. Dept., University Duisburg-Essen, Duisburg
Abstract :
We fabricated and characterised an n-InAs nanowhisker field effect transistors. Nanowhiskers were grown by metal-organic vapour-phase epitaxy (MOVPE) using the vapour-liquid-solid (VLS) growth mode. The fabricated device exhibits a high normalized transconductance (gm /wg) of 895 mS/mm and electron mobility above 4800 cm 2/Vs
Keywords :
III-V semiconductors; MOCVD; electron mobility; field effect transistors; indium compounds; nanotechnology; nanowires; semiconductor quantum wires; vapour phase epitaxial growth; InAs; MOVPE; electron mobility; metal-organic vapour-phase epitaxy; n-InAs single nanowhisker field-effect transistors; vapour-liquid-solid growth; Annealing; Contacts; Doping; Epitaxial growth; FETs; Fabrication; Gold; Intrusion detection; Nanoscale devices; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634210
