DocumentCode :
1981896
Title :
The Multiple Quantum Barrier Structures and their Application to the High Power Visible Laser Diode with the Strained InGaP Active Layer Grown by MOCVD
Author :
Kadoiwa, K. ; Motoda, T. ; Nishimura, T. ; Arimoto, S. ; Watanabe, H. ; Kamizato, T. ; Mizuguchi, K. ; Murotani, T.
Author_Institution :
Optoelectronic and Microwave Devices Laboratory, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
226
Lastpage :
227
Keywords :
Controllability; Diode lasers; MOCVD; Mirrors; Optical recording; Power generation; Power lasers; Quantum well lasers; Surface emitting lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665028
Filename :
665028
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1981896
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