In-situ Microwave Characterization of Medium-k HfO2 and High-k STO Dielectrics for MIM Capacitors Integrated in Back-End of Line of IC

Author

Vo, T.T. ; Lacrevaz, Thierry ; Flechet, Bernard ; Farcy, A. ; Morand, Yves ; Blonkowski, S. ; Torres, Juana

Author_Institution

IMEP-LAHC CNRS 5310, Univ. de Savoie, Le Bourget

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

The complex permittivity microwave characterization of medium-k materials as HfO₂ and high-k materials as STO is presented. The characterization method, using coplanar or microstrip waveguides, allows a large band characterization, from 40 MHz to 40 GHz. It also allows investigating these materials with large scale thickness, from 10 nm up to 500 nm, in a configuration which can be very close to their final integration in an advanced damascene architecture of MIM capacitor. We show that the permittivity of such materials can be process and frequency-dependent.

Keywords

MIM devices; capacitors; coplanar waveguides; hafnium compounds; microwave integrated circuits; HfO₂; complex permittivity microwave characterization; coplanar waveguides; frequency 40 MHz to 40 GHz; high-k STO dielectrics; in-situ microwave characterization; integrated circuit; medium-k HfO₂; metal insulator metal capacitors; microstrip waveguides; Coplanar waveguides; Dielectrics and electrical insulation; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Permittivity; Radio frequency; Testing; Waveguide components; HfO2; MIM capacitor; PZT; STO; coplanar waveguide; high-k dielectric; loss tangent; medium-k dielectric; microstrip waveguide; microwave characterization; propagation exponent; scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4555089

Filename

4555089