DocumentCode :
1982033
Title :
Growth and Characterization of Type-II/Type-I Aigalnas/lnp Interfaces
Author :
Sacilotti, M. ; Motisuke, P. ; Monteil, Y. ; Abraham, P. ; Iikawa, F. ; Campos, C. ; Furtado, M. ; Landers, R. ; Morais, J. ; Decobert, J. ; Waldman, B.
Author_Institution :
Centro de Pesquisa e Desenvolvimento - TELEBRAS - Campinas-SP, Brazil
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
236
Lastpage :
237
Keywords :
Aluminum; Artificial intelligence; Epitaxial growth; Epitaxial layers; Heterojunctions; Indium gallium arsenide; Indium phosphide; Photoluminescence; Photonic band gap; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665033
Filename :
665033
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1982033
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