Two Terminal Characterization of Microwave Monolithic Elements

The characterization technique described allows microwave devices such as MESFETs and TEDs to be readily investigated providing information on the operating conditions and device-circuit interaction. Planar devices are modelled due to their role in the developing monolithic technology. The devices are modelled using two terminal ´black box´ responses which are Fourier analysed to obtain the required device planes. A rigorous two dimensional numerical technique is used to simulate the device and circuit. This approach is easily extended to other active devices.