• DocumentCode
    1983005
  • Title

    Investigation of conductive transparent In2O3 thin films deposited by triode sputtering

  • Author

    Axelevitch, A. ; Gorenstein, B. ; Verdyan, A. ; Golan, G.

  • Author_Institution
    Holon Acad. Inst. of Technol., Israel
  • fYear
    2004
  • fDate
    6-7 Sept. 2004
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    Conductive transparent thin films play a significant role in the today´s electronics and optical technologies. Displays of various types, photovoltaic systems, and optoelectronic devices use these films as transparent signal electrodes or heating surfaces. In our work, conductive transparent indium oxide (In2O3) thin films were prepared using a novel implementation of the triode sputtering method. A pure In2O3 target of 2 inch in diameter was used for sputtering in a laboratory triode system provided with a plane plasma discharge at relatively low pressure (0.5-5 mTorr) of pure argon (Ar). The substrate temperature was varied during experiments from room temperature up to 200°C. The films were deposited on optical glass slides of 1 mm thick. The resultant films were characterized for their optical and electrical properties and compared with the In2O3 films deposited by magnetron sputtering.
  • Keywords
    argon; electric properties; indium compounds; optical properties; plasma deposition; sputter deposition; thin films; Ar; In2O3; In2O3 thin films; argon; conductive transparent thin films; electrical properties; indium oxide; optical properties; plane plasma discharge; triode sputtering; Argon; Conductive films; Displays; Electrodes; Heating; Optical films; Optoelectronic devices; Photovoltaic systems; Plasma temperature; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Electronics Engineers in Israel, 2004. Proceedings. 2004 23rd IEEE Convention of
  • Print_ISBN
    0-7803-8427-X
  • Type

    conf

  • DOI
    10.1109/EEEI.2004.1361115
  • Filename
    1361115