Design of a silicon magnetodiodes array with self-compensation for temperature drift

Author

Zhang, Dongfeng ; Kong, Deyi ; Tao, Yongchun ; Shan, Jianhua

Author_Institution

State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Anhui, China

fYear

2005

fDate

27 June-3 July 2005

Abstract

The paper describes the design of a silicon magnetodiodes array with self-compensation for temperature drift, which is used for perpendicular-plane magnetic field sensing. Individual sensor cells comprise a pair of silicon magnetodiodes with differential structure. The magnetodiodes array can be fabricated on the surface of high-resistivity silicon on insulator (SOI) with the combination of IC process and micro-electro-mechanical system (MEMS) techniques, the proposed fabrication process is provided.

Keywords

compensation; integrated circuit design; magnetic sensors; microsensors; nanotechnology; semiconductor diodes; silicon-on-insulator; IC fabrication process; MEMS technique; SOI; high-resistivity silicon on insulator; micro-electro-mechanical system technique; perpendicular-plane magnetic field sensing; self-compensation; sensor cells; silicon magnetodiodes array design; silicon magnetodiodes array fabrication; temperature drift; Magnetic fields; Magnetic semiconductors; Magnetic sensors; Radiative recombination; Rough surfaces; Sensor arrays; Silicon on insulator technology; Surface resistance; Surface roughness; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Acquisition, 2005 IEEE International Conference on

Print_ISBN

0-7803-9303-1

Type

conf

DOI

10.1109/ICIA.2005.1635070

Filename

1635070