Title :
Temperature Stabilization of GaAs FET Oscillators using Dielectric Resonators
Author :
Tsironis, C. ; Lesartre, P.
Abstract :
A model of frequency drift with temperature of GaAs FET oscillators, stabilized using dielectric resonators is presented. Conditions for output power, oscillation frequency and frequency stability have been derived. A stacked resonator with linear resonance frequency-temperature characteristic has been developed using Barium Titanate and Titanium Zirconate dielectric material. It enabled the realization of a highly stable oscillator at 11.5 GHz with total drift of ±120 KHz in the temperature range of ¿20°C to 80°C.
Keywords :
Barium; Dielectrics; FETs; Gallium arsenide; Oscillators; Power generation; Resonance; Resonant frequency; Stability; Temperature;
Conference_Titel :
Microwave Conference, 1982. 12th European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1982.333160
