The electrical and reliability effect of bottom electrode materials characteristics of (Ba,Sr)TiO/sub 3/ capacitors

Author

Sun, S.C. ; Tsai, M.S.

Author_Institution

Taiwan Semicond. Manuf. Co., China

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

253

Lastpage

256

Abstract

(Ba,Sr)TiO/sub 3/ (BST) thin film capacitors using Pt, Ir, IrO/sub 2//Ir, Ru and RuO/sub 2//Ru bottom electrode materials are investigated for high density DRAMs. Excellent electrical characteristics (e.g. high dielectric constant and low leakage current) and TDDB reliability of BST capacitors with Ir bottom electrodes were obtained. The dielectric constant and leakage current of BST on Ir were further improved by postdeposition annealing in O/sub 2/ at 600/spl sim/700/spl deg/C.

Keywords

DRAM chips; annealing; dielectric thin films; electrodes; integrated circuit reliability; leakage currents; permittivity; thin film capacitors; 600 to 700 degC; BaSrTiO/sub 3/; Ir; IrO/sub 2/-Ir; Pt; Ru; RuO/sub 2/-Ru; TDDB reliability; bottom electrode materials characteristics; dielectric constant; electrical characteristics; high density DRAMs; leakage current; postdeposition annealing; reliability effect; thin film capacitors; Binary search trees; Capacitors; Dielectric constant; Dielectric materials; Dielectric thin films; Electric variables; Electrodes; High-K gate dielectrics; Leakage current; Materials reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650375

Filename

650375