DocumentCode
1985757
Title
Secondary Electron flash-a high performance, low power flash technology for 0.35 /spl mu/m and below
Author
Bude, J.D. ; Mastrapasqua, M. ; Pinto, M.R. ; Gregor, R.W. ; Kelley, P.J. ; Kohler, R.A. ; Leung, C.W. ; Ma, Y. ; McPartland, R.J. ; Roy, P.K. ; Singh, R.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
279
Lastpage
282
Abstract
This work presents recent results on Secondary Electron flash memory, and contrasts this approach to standard for scaled, low power mass storage applications.
Keywords
EPROM; integrated memory circuits; 0.35 micron; CHISEL; scaled low power mass storage technology; secondary electron flash memory; Channel hot electron injection; Charge pumps; Digital cameras; Flash memory; Flash memory cells; Low voltage; Power generation; Power supplies; Stress; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650381
Filename
650381
Link To Document