Title :
Grain boundary recombination and efficiency of polycrystalline silicon solar cells
Author :
Sharma, Kiran ; Joshi, D.P. ; Bhatt, D.P.
Author_Institution :
Deptt. Of Phys., Graphic Era Univ., Dehra Dun, India
Abstract :
The dependence of grain boundary (GB) space-charge potential barrier height (qVg), effective diffusion length of minority carriers L*n, and the efficiency of polycrystalline silicon (PX-Si) solar cells on grain size is studied theoretically. The computations are done by considering Gaussian energy distribution for GB interface states. It is observed that a good agreement between the theoretical results and the available experimental data for efficiency of PX-Si solar cells can be achieved only when the variation of diode quality factor with grain size is considered.
Keywords :
Gaussian distribution; Q-factor; carrier lifetime; elemental semiconductors; grain boundaries; grain boundary diffusion; grain size; interface states; minority carriers; semiconductor diodes; silicon; solar cells; Gaussian energy distribution; Si; diode quality factor; effective diffusion length; grain boundary recombination; grain size; interface states; minority carriers diffusion; polycrystalline silicon solar cells; space-charge potential barrier height; Crystalline materials; Educational institutions; Grain boundaries; Grain size; Interface states; Photovoltaic cells; Physics; Silicon; Space charge; Spontaneous emission; grain boundary; polycrystalline silicon; solar cells;
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
DOI :
10.1109/ELECTRO.2009.5441052
