Novel self-convergent programming scheme for multi-level p-channel flash memory

A new operation scheme is proposed for multi-level p-channel flash memory. By utilizing the gate pulse which facilitates simultaneous FN electron ejection out of floating gate and CHE injection into floating gate from channel, it is demonstrated that the memory cell can be programmed and convergent to specific states without verification. A linear relationship between the voltage of gate pulse and programmed threshold voltage is also observed. The low-voltage operated and high efficient BBHE is employed as erase operation scheme. A 4-level p-channel flash memory using proposed operation scheme is demonstrated.