• DocumentCode
    1986191
  • Title

    Radar Pulsed Burn-Out of Low Noise GaAs Mesfets

  • Author

    Dormer, L. ; Gardner, P

  • Author_Institution
    Ferranti Electronics Limited, Microwave Division, Poynton, Cheshire, England.
  • fYear
    1983
  • fDate
    3-8 Sept. 1983
  • Firstpage
    148
  • Lastpage
    153
  • Abstract
    This paper presents some new low noise GaAs FET radar burn-out results. The spread in burn-out energies is very large, as in earlier reported work. A simple model of the GaAs FET gate shows qualitative agreement with some aspects of observed failures. Interpulse degradation of gain and noise figure have been measured and a new circuit technique has been developed which significantly reduces the degradation.
  • Keywords
    Circuit noise; Circuit testing; Gallium arsenide; MESFETs; Noise figure; Pulse amplifiers; Pulse generation; Pulse measurements; Radar; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1983. 13th European
  • Conference_Location
    Nurnberg, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1983.333219
  • Filename
    4131881
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986191