DocumentCode

1986201

Title

Deposition by LP-MOVPE in the Ga-In-As-P System on Differently Oriented Substrates

Author

Elsner, B. ; Westphalen, R. ; Heime, K. ; Balk, P.

Author_Institution

Institut fur Halbleitertechnik, Germany

fYear

1992

fDate

8-11 Jun 1992

Firstpage

265

Lastpage

266

Keywords

Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Lattices; Pressure effects; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

conf

DOI

10.1109/MOVPE.1992.665050

Filename

665050