DocumentCode
1986602
Title
Threshold Voltage Model of SiGe Channel pMOSFET without Si Cap Layer
Author
Zou, X. ; Li, C.X. ; Xu, J.P. ; Lai, P.T. ; Chen, W.B.
Author_Institution
Department of Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, P. R. China
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
123
Lastpage
126
Abstract
An analytical model on the threshold voltage of SiGe-channel pMOSFET without Si cap layer is developed by solving the Poisson´s equation. Energy-band offset induced by SiGe strained layer, short-channel effect and drain-induced barrier lowering effect are taken into account in the model. To evaluate the validity of the model, simulated results are compared with experimental data and results from BSIM4, and good agreements are confirmed.
Keywords
Analytical models; CMOS technology; Dielectrics; Germanium alloys; Germanium silicon alloys; MOSFET circuits; Poisson equations; Semiconductor device modeling; Silicon germanium; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635221
Filename
1635221
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