Optical properties of green light-emitting diodes grown on r-plane sapphire substrates

Author

Seo, Yong Gon ; Baik, Kwang Hyeon ; Song, Hoo-Young ; Son, Ji-Su ; Kim, Jihoon ; Oh, Kyunghwan ; Hwang, Sung-Min

Author_Institution

Korea Electron. Technol. Inst., Sungnam, South Korea

fYear

2011

fDate

Aug. 28 2011-Sept. 1 2011

Firstpage

1215

Lastpage

1216

Abstract

Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour deposition (MOCVD) on r-plane sapphire substrates. An optical output power of 0.26 mW was obtained at a drive current of 20 mA and 1.27 mW at 100 mA, with peak emission wavelengths of 504.5 nm and 503.9 nm, respectively. The peak emission wavelength shift for the green LED was 4.4 nm when the injection current was changed from 5 to 100 mA.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical properties; sapphire; wide band gap semiconductors; Al₂O₃; InGaN-GaN; drive current; metal organic chemical vapour deposition; multiple quantum well structures; nonpolar a-plane light emitting diodes; optical properties; power 0.26 mW; r-plane sapphire substrates; Current measurement; Gallium nitride; Green products; Light emitting diodes; Power generation; Stimulated emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4577-1939-4

Type

conf

DOI

10.1109/IQEC-CLEO.2011.6193816

Filename

6193816