DocumentCode :
1987960
Title :
Investigation of interconnect parameters for high speed microelectronics devices applications
Author :
Tomar, V.K. ; Gupta, S.K. ; Yadav, S.G. ; Gautam, D.K.
Author_Institution :
Dept. of Electron. & Commun. Eng., BMAS Eng. Coll., Agra, India
fYear :
2009
fDate :
22-24 Dec. 2009
Firstpage :
160
Lastpage :
161
Abstract :
The present paper reports the optimization and analysis of the interconnect parameters such as ground and coupling capacitance which play very important roll in the design and development of future microelectronics devices. Here, we have optimized ground capacitance along with the variation in dielectric thickness and interwire spacing respectively. It has been observed that ground capacitance increases with increase in interwire spacing. It is also find out that the ground capacitance decreases with simultaneously increase in dielectric thickness.
Keywords :
capacitance; integrated circuit interconnections; coupling capacitance; dielectric interwire; dielectric thickness; interconnect parameters; speed microelectronics devices applications; Capacitance; Delay; Design engineering; Dielectric devices; Integrated circuit interconnections; Microelectronics; Photonic integrated circuits; Structural engineering; Very large scale integration; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
Type :
conf
DOI :
10.1109/ELECTRO.2009.5441149
Filename :
5441149
Link To Document :
بازگشت