DocumentCode :
1987973
Title :
Source/Drain Resistance of UTB SOI MOSFET
Author :
Ke, Wei ; Zhang, Shengdong ; Liu, Xiaoyan ; Han, Ruqi
Author_Institution :
Institute of Microelectronics, Peking University, Beijing Chian, 100871
fYear :
2005
fDate :
19-21 Dec. 2005
Firstpage :
405
Lastpage :
408
Abstract :
The source/drain (S/D) series resistance of the ultra-thin-body (UTB) SOI MOSFETs with an elevated S/D and undoped channel is studied. The dependence of the series resistance components on the geometry/process parameters is quantitatively investigated. It is shown that the S/D contact resistivity, extension length, and doping profile are the major factors determining the series resistance. It is also suggested that with scaling into sub-20 nm technology nodes, the elevated S/D structure should be very difficult to provide UTB device with the acceptable series resistance specified by the Technology Roadmap.
Keywords :
CMOS technology; Conductivity; Contact resistance; Electrostatic discharge; Geometry; Immune system; MOSFET circuits; Semiconductor films; Silicides; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
Type :
conf
DOI :
10.1109/EDSSC.2005.1635292
Filename :
1635292
Link To Document :
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