Title :
ESD Protection Circuit with Separated GGNMOS Segment for Input Protection
Author :
Hwang, Sang Joon ; Lee, Chang Hun ; Jung, Min Chul ; Sung, Man Young
Author_Institution :
Department of Electrical Engineering, Korea University, 1, 5-ka, Anam-dong, Sungbuk-ku, Seoul, South Korea, E-mail: semicad@korea.ac.kr
Abstract :
An ESD protection circuit in chip level protection is proposed as the electrostatic discharge (ESD) clamping circuit such as thick field oxide (TFO), grounded gate MOS (GGNMOS) and separated segment for input protection. The ESD protection circuit for input protection was implemented from the proposed ESD protection circuit. The GGNMOS applied to separated segment has been simulated by DESSIS of TCAD for thermal characteristic with human body model (HBM) pulse and realized the protection circuit for input protection has been simulated by HSPICE.
Keywords :
Biological system modeling; Circuit simulation; Clamps; Electric breakdown; Electrostatic discharge; Humans; Integrated circuit reliability; Manufacturing processes; Protection; Thyristors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635320
