Title :
Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam
Author :
Feng, Li Jian ; Makeev, V.A. ; Remnev, G.E. ; Guselnikov, V.I. ; Saltemakov, M.C.
Author_Institution :
High-Voltage Res. Inst., Tomsk Polytech. Univ., Russia
fDate :
26 June-2 July 2005
Abstract :
In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam (HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction (XRD), Rutherford back scattering (RBS), atomic force microscopy (AFM) and scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.
Keywords :
III-V semiconductors; Rutherford backscattering; X-ray diffraction; atomic force microscopy; electron microscopy; gallium arsenide; ion beam assisted deposition; plasma deposition; semiconductor thin films; surface morphology; 200 to 500 nm; 3 to 5 nm; GaAs-Si; Rutherford back scattering; X-ray diffraction; ablation plasma; atomic force microscopy; high impulse phase ion beam; scanning electron microscope; surface morphology; thin film composition; thin film structure; Atomic force microscopy; Atomic layer deposition; Gallium arsenide; Ion beams; Plasma x-ray sources; Scanning electron microscopy; Sputtering; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Science and Technology, 2005. KORUS 2005. Proceedings. The 9th Russian-Korean International Symposium on
Print_ISBN :
0-7803-8943-3
DOI :
10.1109/KORUS.2005.1507765
