Compact modeling of SOI MOSFETs with ultra thin silicon and BOX layers for ultra low power applications

A compact model for SOI-MOSFET with ultra-thin both SOI and BOX layers has been developed base on the potential distribution within the device. The potential distribution is calculated by solving the Poisson equation together with additional analytical equations derived under approximations. All equations are solved simultaneously by the Newton iteration method. It is demonstrated that the model can not only reproduce measured specific device characteristics but can even predict change of device characteristics caused by device parameter change.